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RN2312(TE85L,F)

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Toshiba Electronic Devices and Storage Corporation RN2312(TE85L,F)

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN2312(TE85L,F)
Description
TRANS PREBIAS PNP 50V 0.1A USM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN2312(TE85L,F) PDF
In Stock
3000
RN2312(TE85L,F) Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200 MHz
Power - Max100 mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageUSM
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