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SIHH28N60E-T1-GE3

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Vishay / Siliconix SIHH28N60E-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHH28N60E-T1-GE3
Description
MOSFET N-CH 600V 29A PPAK 8 X 8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHH28N60E-T1-GE3 PDF
In Stock
680
SIHH28N60E-T1-GE3 Tech Specifications
SeriesE
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs98mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs129 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2614 pF @ 100 V
FET Feature-
Power Dissipation (Max)202W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN
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Request Quote Now

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