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NTMFS4H02NT1G

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Rochester Electronics NTMFS4H02NT1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NTMFS4H02NT1G
Description
MOSFET N-CH 25V 37A/193A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NTMFS4H02NT1G PDF
NTMFS4H02NT1G Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.651 pF @ 12 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 83W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN
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