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IMBG120R090M1HXTMA1

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IR (Infineon Technologies) IMBG120R090M1HXTMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IMBG120R090M1HXTMA1
Description
TRANS SJT N-CH 1.2KV 26A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IMBG120R090M1HXTMA1 PDF
IMBG120R090M1HXTMA1 Tech Specifications
SeriesCoolSiC™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1.2 kV
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs125mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 18 V
Vgs (Max)+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds763 pF @ 800 V
FET FeatureStandard
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-12
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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