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IPA180N10N3GXKSA1

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Rochester Electronics IPA180N10N3GXKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPA180N10N3GXKSA1
Description
28A, 100V, 0.018OHM, N-CHANNEL,
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPA180N10N3GXKSA1 PDF
IPA180N10N3GXKSA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 28A, 10V
Vgs(th) (Max) @ Id3.5V @ 35µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.8 pF @ 50 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack
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