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TK6Q65W,S1Q

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Toshiba Electronic Devices and Storage Corporation TK6Q65W,S1Q

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK6Q65W,S1Q
Description
MOSFET N-CH 650V 5.8A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK6Q65W,S1Q PDF
TK6Q65W,S1Q Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 300 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak
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