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RM12N650IP

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Rectron USA RM12N650IP

Manufacturer :
Rectron USA
Mfr. Part # :
RM12N650IP
Description
MOSFET N-CH 650V 11.5A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RM12N650IP PDF
RM12N650IP Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 50 V
FET Feature-
Power Dissipation (Max)101W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak
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