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CSD25211W1015

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Texas Instruments CSD25211W1015

Manufacturer :
Texas Instruments
Mfr. Part # :
CSD25211W1015
Description
MOSFET P-CH 20V 3.2A 6DSBGA
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
CSD25211W1015 PDF
In Stock
1265
CSD25211W1015 Tech Specifications
SeriesNexFET™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1 nC @ 4.5 V
Vgs (Max)-6V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DSBGA (1x1.5)
Package / Case6-UFBGA, DSBGA
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