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FQB10N20CTM

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Rochester Electronics FQB10N20CTM

Manufacturer :
Rochester Electronics
Mfr. Part # :
FQB10N20CTM
Description
MOSFET N-CH 200V 9.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQB10N20CTM PDF
In Stock
330
FQB10N20CTM Tech Specifications
SeriesQFET®
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V
FET Feature-
Power Dissipation (Max)72W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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