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FQD4N25TM-WS

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Sanyo Semiconductor/ON Semiconductor FQD4N25TM-WS

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQD4N25TM-WS
Description
MOSFET N-CH 250V 3A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQD4N25TM-WS PDF
In Stock
2347500
FQD4N25TM-WS Tech Specifications
SeriesQFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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Request Quote Now

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