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SIR624DP-T1-RE3

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Vishay / Siliconix SIR624DP-T1-RE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIR624DP-T1-RE3
Description
MOSFET N-CH 200V 5.7A/18.6A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIR624DP-T1-RE3 PDF
SIR624DP-T1-RE3 Tech Specifications
SeriesThunderFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C5.7A (Ta), 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1110 pF @ 100 V
FET Feature-
Power Dissipation (Max)5W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
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