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R8002ANX

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ROHM Semiconductor R8002ANX

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
R8002ANX
Description
MOSFET N-CH 800V 2A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
R8002ANX PDF
In Stock
488
R8002ANX Tech Specifications
Series-
PackageBulk
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 25 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FM
Package / CaseTO-220-3 Full Pack
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Request Quote Now

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