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TPN1110ENH,L1Q

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Toshiba Electronic Devices and Storage Corporation TPN1110ENH,L1Q

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TPN1110ENH,L1Q
Description
MOSFET N-CH 200V 7.2A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TPN1110ENH,L1Q PDF
In Stock
4190
TPN1110ENH,L1Q Tech Specifications
SeriesU-MOSVIII-H
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 100 V
FET Feature-
Power Dissipation (Max)700mW (Ta), 39W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN
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