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IPI032N06N3GAKSA1

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Rochester Electronics IPI032N06N3GAKSA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPI032N06N3GAKSA1
Description
MOSFET N-CH 60V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI032N06N3GAKSA1 PDF
In Stock
400
IPI032N06N3GAKSA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs165 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13 pF @ 30 V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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