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IRFBA90N20DPBF

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Rochester Electronics IRFBA90N20DPBF

Manufacturer :
Rochester Electronics
Mfr. Part # :
IRFBA90N20DPBF
Description
IRFBA90N20 - SMPS HEXFET
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRFBA90N20DPBF PDF
In Stock
765
IRFBA90N20DPBF Tech Specifications
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 59A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6.08 pF @ 25 V
FET Feature-
Power Dissipation (Max)650W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageSUPER-220™ (TO-273AA)
Package / CaseTO-273AA
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