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SI2307BDS-T1-E3

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Vishay / Siliconix SI2307BDS-T1-E3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI2307BDS-T1-E3
Description
MOSFET P-CH 30V 2.5A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI2307BDS-T1-E3 PDF
In Stock
832
SI2307BDS-T1-E3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs78mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 15 V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
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Request Quote Now

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