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FDB8870-F085

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Rochester Electronics FDB8870-F085

Manufacturer :
Rochester Electronics
Mfr. Part # :
FDB8870-F085
Description
MOSFET N-CH 30V 23A/160A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDB8870-F085 PDF
FDB8870-F085 Tech Specifications
SeriesAutomotive, AEC-Q101, PowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs3.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 15 V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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