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IPD65R1K0CEAUMA1

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IR (Infineon Technologies) IPD65R1K0CEAUMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD65R1K0CEAUMA1
Description
MOSFET N-CH 650V 7.2A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD65R1K0CEAUMA1 PDF
IPD65R1K0CEAUMA1 Tech Specifications
SeriesCoolMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V
FET FeatureSuper Junction
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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