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FQB34N20LTM

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Rochester Electronics FQB34N20LTM

Manufacturer :
Rochester Electronics
Mfr. Part # :
FQB34N20LTM
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQB34N20LTM PDF
FQB34N20LTM Tech Specifications
SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3.9 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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