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IPI040N06N3GXKSA1

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IR (Infineon Technologies) IPI040N06N3GXKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPI040N06N3GXKSA1
Description
MOSFET N-CH 60V 90A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI040N06N3GXKSA1 PDF
IPI040N06N3GXKSA1 Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 30 V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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