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NDBA180N10BT4H

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Rochester Electronics NDBA180N10BT4H

Manufacturer :
Rochester Electronics
Mfr. Part # :
NDBA180N10BT4H
Description
MOSFET N-CH 100V 180A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NDBA180N10BT4H PDF
NDBA180N10BT4H Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C180A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6.95 pF @ 50 V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Request Quote Now

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