Series | Automotive, AEC-Q101 | |
Package | Tube | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 208mOhm @ 5A, 18V | |
Vgs(th) (Max) @ Id | 5.6V @ 2.5mA | |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 18 V | |
Vgs (Max) | +22V, -4V | |
Input Capacitance (Ciss) (Max) @ Vds | 398 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 103W | |
Operating Temperature | 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247N | |
Package / Case | TO-247-3 |
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