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RS1E350BNTB

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ROHM Semiconductor RS1E350BNTB

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
RS1E350BNTB
Description
MOSFET N-CH 30V 35A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RS1E350BNTB PDF
In Stock
1899
RS1E350BNTB Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7900 pF @ 15 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSOP
Package / Case8-PowerTDFN
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