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SIHD6N80E-GE3

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Vishay / Siliconix SIHD6N80E-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHD6N80E-GE3
Description
MOSFET N-CH 800V 5.4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHD6N80E-GE3 PDF
In Stock
2925
SIHD6N80E-GE3 Tech Specifications
SeriesE
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds827 pF @ 100 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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