IR (Infineon Technologies) BSZ097N10NS5ATMA1

Manufacturer :: IR (Infineon Technologies)

Mfr. Part # :: BSZ097N10NS5ATMA1

Description: MOSFET N-CH 100V 8A/40A TSDSON

Catalog: Transistors - FETs, MOSFETs - Single

Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DataSheet: BSZ097N10NS5ATMA1 PDF

BSZ097N10NS5ATMA1 Tech Specifications

Series		OptiMOS™
Package		Tape & Reel (TR)Cut Tape (CT)
Part Status		Active
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)		100 V
Current - Continuous Drain (Id) @ 25°C		8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)		6V, 10V
Rds On (Max) @ Id, Vgs		9.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id		3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs		28 nC @ 10 V
Vgs (Max)		±20V
Input Capacitance (Ciss) (Max) @ Vds		2080 pF @ 50 V
FET Feature		-
Power Dissipation (Max)		2.1W (Ta), 69W (Tc)
Operating Temperature		-55°C ~ 150°C (TJ)
Mounting Type		Surface Mount
Supplier Device Package		PG-TSDSON-8-FL
Package / Case		8-PowerTDFN

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