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SIA477EDJ-T1-GE3

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Vishay / Siliconix SIA477EDJ-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIA477EDJ-T1-GE3
Description
MOSFET P-CH 12V 12A PPAK SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIA477EDJ-T1-GE3 PDF
In Stock
1789
SIA477EDJ-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs14mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 8 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2970 pF @ 6 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6
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Request Quote Now

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