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TK28N65W,S1F

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Toshiba Electronic Devices and Storage Corporation TK28N65W,S1F

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK28N65W,S1F
Description
MOSFET N-CH 650V 27.6A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK28N65W,S1F PDF
In Stock
432
TK28N65W,S1F Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 300 V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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