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TK10E60W,S1VX

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Toshiba Electronic Devices and Storage Corporation TK10E60W,S1VX

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
TK10E60W,S1VX
Description
MOSFET N-CH 600V 9.7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
TK10E60W,S1VX PDF
In Stock
540
TK10E60W,S1VX Tech Specifications
SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
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