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FDP8D5N10C

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Sanyo Semiconductor/ON Semiconductor FDP8D5N10C

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDP8D5N10C
Description
MOSFET N-CH 100V 76A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDP8D5N10C PDF
FDP8D5N10C Tech Specifications
SeriesPowerTrench®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 76A, 10V
Vgs(th) (Max) @ Id4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2475 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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