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IPI80N06S2L11AKSA2

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Rochester Electronics IPI80N06S2L11AKSA2

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPI80N06S2L11AKSA2
Description
MOSFET N-CH 55V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI80N06S2L11AKSA2 PDF
IPI80N06S2L11AKSA2 Tech Specifications
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2075 pF @ 25 V
FET Feature-
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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