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IPD50R650CEAUMA1

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IR (Infineon Technologies) IPD50R650CEAUMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD50R650CEAUMA1
Description
MOSFET N-CH 500V 9A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD50R650CEAUMA1 PDF
In Stock
2227
IPD50R650CEAUMA1 Tech Specifications
SeriesCoolMOS™ CE
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds342 pF @ 100 V
FET Feature-
Power Dissipation (Max)69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-344
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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