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FCP600N65S3R0

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Rochester Electronics FCP600N65S3R0

Manufacturer :
Rochester Electronics
Mfr. Part # :
FCP600N65S3R0
Description
MOSFET N-CH 650V 6A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FCP600N65S3R0 PDF
In Stock
1600
FCP600N65S3R0 Tech Specifications
SeriesSuperFET® III
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds465 pF @ 400 V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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Request Quote Now

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