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NTD4815N-1G

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Rochester Electronics NTD4815N-1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NTD4815N-1G
Description
MOSFET N-CH 30V 6.9A/35A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NTD4815N-1G PDF
In Stock
3150
NTD4815N-1G Tech Specifications
Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 12 V
FET Feature-
Power Dissipation (Max)1.26W (Ta), 32.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak
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