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IPP048N12N3GXKSA1

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IR (Infineon Technologies) IPP048N12N3GXKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPP048N12N3GXKSA1
Description
MOSFET N-CH 120V 100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP048N12N3GXKSA1 PDF
IPP048N12N3GXKSA1 Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs182 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 60 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
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