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NVTFS4C05NTAG

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Rochester Electronics NVTFS4C05NTAG

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVTFS4C05NTAG
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVTFS4C05NTAG PDF
NVTFS4C05NTAG Tech Specifications
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.988 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN
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