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G3R20MT12N

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GeneSiC Semiconductor G3R20MT12N

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
G3R20MT12N
Description
SIC MOSFET N-CH 105A SOT227
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
G3R20MT12N PDF
G3R20MT12N Tech Specifications
SeriesG3R™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs219 nC @ 15 V
Vgs (Max)+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds5873 pF @ 800 V
FET Feature-
Power Dissipation (Max)365W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC
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