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SQ2325ES-T1_GE3

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Vishay / Siliconix SQ2325ES-T1_GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SQ2325ES-T1_GE3
Description
MOSFET P-CH 150V 840MA TO236
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SQ2325ES-T1_GE3 PDF
In Stock
7894
SQ2325ES-T1_GE3 Tech Specifications
SeriesAutomotive, AEC-Q101, TrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 50 V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 175°C (TA)
Mounting TypeSurface Mount
Supplier Device PackageTO-236 (SOT-23)
Package / CaseTO-236-3, SC-59, SOT-23-3
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