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NDD60N900U1T4G

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Rochester Electronics NDD60N900U1T4G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NDD60N900U1T4G
Description
MOSFET N-CH 600V 5.7A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NDD60N900U1T4G PDF
NDD60N900U1T4G Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 50 V
FET Feature-
Power Dissipation (Max)74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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Request Quote Now

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