Series | HEXFET® | |
Package | Bulk | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 12 V | |
Current - Continuous Drain (Id) @ 25°C | 84A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V | |
Vgs(th) (Max) @ Id | 1.9V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 2.49 pF @ 6 V | |
FET Feature | - | |
Power Dissipation (Max) | 88W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | I-PAK | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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