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SUD35N10-26P-T4GE3

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Vishay / Siliconix SUD35N10-26P-T4GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SUD35N10-26P-T4GE3
Description
MOSFET N-CH 100V 35A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SUD35N10-26P-T4GE3 PDF
SUD35N10-26P-T4GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 12 V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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