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IPB65R095C7ATMA2

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IR (Infineon Technologies) IPB65R095C7ATMA2

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB65R095C7ATMA2
Description
MOSFET N-CH 650V 24A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB65R095C7ATMA2 PDF
In Stock
1995
IPB65R095C7ATMA2 Tech Specifications
SeriesCoolMOS™ C7
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2140 pF @ 400 V
FET Feature-
Power Dissipation (Max)128W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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