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SIE820DF-T1-GE3

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Vishay / Siliconix SIE820DF-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIE820DF-T1-GE3
Description
MOSFET N-CH 20V 50A 10POLARPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIE820DF-T1-GE3 PDF
SIE820DF-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 10 V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (S)
Package / Case10-PolarPAK® (S)
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