Series | HEXFET® | |
Package | Tube | |
Part Status | Active | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 55 V | |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 175mOhm @ 6.6A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 38W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | IPAK (TO-251) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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