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IPB35N12S3L26ATMA1

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Rochester Electronics IPB35N12S3L26ATMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPB35N12S3L26ATMA1
Description
MOSFET N-CH 120V 35A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB35N12S3L26ATMA1 PDF
IPB35N12S3L26ATMA1 Tech Specifications
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs26.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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