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G3R160MT12D

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GeneSiC Semiconductor G3R160MT12D

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
G3R160MT12D
Description
SIC MOSFET N-CH 22A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
G3R160MT12D PDF
In Stock
535
G3R160MT12D Tech Specifications
SeriesG3R™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id2.69V @ 5mA
Gate Charge (Qg) (Max) @ Vgs28 nC @ 15 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 800 V
FET Feature-
Power Dissipation (Max)123W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
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