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IPP65R190C6XKSA1

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IR (Infineon Technologies) IPP65R190C6XKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPP65R190C6XKSA1
Description
MOSFET N-CH 650V 20.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP65R190C6XKSA1 PDF
In Stock
390
IPP65R190C6XKSA1 Tech Specifications
SeriesCoolMOS™
PackageTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1620 pF @ 100 V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
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Request Quote Now

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