Vishay / Siliconix SIS126DN-T1-GE3

Manufacturer :: Vishay / Siliconix

Mfr. Part # :: SIS126DN-T1-GE3

Description: MOSFET N-CH 80V 12A/45.1A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DataSheet: SIS126DN-T1-GE3 PDF

SIS126DN-T1-GE3 Tech Specifications

Series		TrenchFET® Gen IV
Package		Tape & Reel (TR)Cut Tape (CT)
Part Status		Active
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)		80 V
Current - Continuous Drain (Id) @ 25°C		12A (Ta), 45.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)		7.5V, 10V
Rds On (Max) @ Id, Vgs		10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id		3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs		32 nC @ 10 V
Vgs (Max)		±20V
Input Capacitance (Ciss) (Max) @ Vds		1402 pF @ 40 V
FET Feature		-
Power Dissipation (Max)		3.7W (Ta), 52W (Tc)
Operating Temperature		-55°C ~ 150°C (TJ)
Mounting Type		Surface Mount
Supplier Device Package		PowerPAK® 1212-8
Package / Case		PowerPAK® 1212-8

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