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IPI023NE7N3 G

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Rochester Electronics IPI023NE7N3 G

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPI023NE7N3 G
Description
MOSFET N-CH 75V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI023NE7N3 G PDF
In Stock
1500
IPI023NE7N3 G Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds14.4 pF @ 37.5 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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