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STP6N65M2

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STMicroelectronics STP6N65M2

Manufacturer :
STMicroelectronics
Mfr. Part # :
STP6N65M2
Description
MOSFET N-CH 650V 4A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
STP6N65M2 PDF
STP6N65M2 Tech Specifications
SeriesMDmesh™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.8 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds226 pF @ 100 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
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