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IPD079N06L3GBTMA1

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IR (Infineon Technologies) IPD079N06L3GBTMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD079N06L3GBTMA1
Description
MOSFET N-CH 60V 50A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD079N06L3GBTMA1 PDF
IPD079N06L3GBTMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4900 pF @ 30 V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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